“The TMM416P is a 16,384 words by 1 bit MOS random access memory circuit fabricated with Toshiba’s double poly N-channel silicon gate process or high performance and high functional density. The TMM416P uses a single transistor dynamic storage cell and dynamic control circuitry to achieve high speed and low power dissipation. Multiplexed address inputs permit the TMM416P to be packaged in a standard 16 pin plastic DIP.
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