Specifications:

Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOIC-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 6 A
Rds On – Drain-Source Resistance: 72 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.5 V
Qg – Gate Charge: 21 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 5 W
Channel Mode: Enhancement
Series: SI4
Configuration: Single
Product Type: MOSFET
Unit Weight: 750 mg

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