“This is a family of 262144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage cell provide high circuit density at reduced costs, the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the 18-pin plastic leaded chip carrier configuration and an increase in system densities. In addition to the RAS only refresh mode and CAS before RAS refresh mode are available.
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