IXGX120N60B
AED 30.00
In stock
In stock
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Stock | Shipping Method | ETA | Cost | |
Available | Self Pickup | 1 Day | Free | |
---|---|---|---|---|
Available | Inside UAE | 2 - 3 Days | 22 AED / Free Above 50 AED | |
Available | International | 4 - 7 Days | 180 AED | 49 $ | |
Pre-Order | General | 2 Weeks |
Payment Methods:
Specifications:
Technology: Si
Package/Case: PLUS 247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.1 V
Maximum Gate Emitter Voltage: – 20 V, + 20 V
Pd – Power Dissipation: 660 W
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: IXGX120N60
Packaging: Tube
Brand: IXYS
Continuous Collector Current: 200 A
Continuous Collector Current Ic Max: 200 A
Gate-Emitter Leakage Current: +/- 400 nA
Height: 21.34 mm
Length: 16.13 mm
Product Type: IGBT Transistors
Product Attributes :
Specification
Unit Of Measure |
Units |
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Brand |
GENERIC |
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