“Specifications:

Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 14 A
Rds On – Drain-Source Resistance: 200 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 38.7 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 79 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 46 ns
Forward Transconductance – Min: 3.2 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 58 ns
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 15 ns
Width: 4.4 mm
Unit Weight: 2 g

“