IRF640N
AED 3.00
In stock
In stock
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| Stock | Location | Shipping Method | ETA | Cost |
| Available | Abu Dhabi | Self Pickup | Wednesday-Saturday: Will be available for pick up on Tuesday Sunday-Tuesday: Will be available for pickup on Thursday | Free |
|---|---|---|---|---|
| Available | Dubai | Self Pickup | 1-2 Days | Free |
| Available | UAE Remote Areas | Delivery | 4-5 days | 22 AED / Free Above 50 AED |
| Available | UAE Urban Areas | Delivery | 2-3 Days | 22 AED / Free Above 50 AED |
| Available | International | Delivery | 4-7 days | 180 AED | 49 $ |
| Pre-Order | General | 2-3 weeks |
Payment Methods:
Specifications:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 67 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 185 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Product Attributes :
Specification
| Unit Of Measure |
Units |
|---|---|
| Brand |
GENERIC |
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