IR2111 – DIP
AED 10.00
In stock
In stock
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Stock | Location | Shipping Method | ETA | Cost |
Available | Abu Dhabi | Self Pickup | Wednesday-Saturday: Will be available for pick up on Tuesday Sunday-Tuesday: Will be available for pickup on Thursday | Free |
---|---|---|---|---|
Available | Dubai | Self Pickup | 1-2 Days | Free |
Available | UAE Remote Areas | Delivery | 4-5 days | 22 AED / Free Above 50 AED |
Available | UAE Urban Areas | Delivery | 2-3 Days | 22 AED / Free Above 50 AED |
Available | International | Delivery | 4-7 days | 180 AED | 49 $ |
Pre-Order | General | 2-3 weeks |
Payment Methods:
The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
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Specification
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