IPB107N20N3G TO-263-2
AED 22.00
In stock
In stock
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| Stock | Shipping Method | ETA | Cost | |
 |
Available | Self Pickup | 1 Day | Free |
|---|---|---|---|---|
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Available | Inside UAE | 2 - 3 Days | 22 AED / Free Above 50 AED |
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Available | International | 4 - 7 Days | 180 AED | 49 $ |
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Pre-Order | General | 2 Weeks |
Payment Methods:
Specifications:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 88 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 65 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 401 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0107 Ohm
Product Attributes :
Specification
| Unit Of Measure |
Units |
|---|---|
| Brand |
GENERIC |
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