Specifications:

Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 290 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 38.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 90 nC
Rise Time (tr): 430 nS
Drain-Source Capacitance (Cd): 670 pF
Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
Package: TO3P