Specifications:

Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PN-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 400 V
Id – Continuous Drain Current: 30 A
Rds On – Drain-Source Resistance: 140 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 120 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 290 W