FF200R12KT3
AED 390.00
In stock
In stock
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| Stock | Shipping Method | ETA | Cost | |
 |
Available | Self Pickup | 1 Day | Free |
|---|---|---|---|---|
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Available | Inside UAE | 2 - 3 Days | 22 AED / Free Above 50 AED |
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Available | International | 4 - 7 Days | 180 AED | 49 $ |
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Pre-Order | General | 2 Weeks |
Payment Methods:
Specifications:
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 295 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1050 W
Package/Case: 62 mm
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.9 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Width: 61.4 mm
Product Attributes :
Specification
| Unit Of Measure |
Units |
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| Brand |
GENERIC |
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