FF200R12KT3

SKU: SDIx0083 Brand:

AED 390.00

In stock

In stock

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Stock Location Shipping Method ETA Cost
Available Abu Dhabi Self Pickup Wednesday-Saturday: Will be available for pick up on Tuesday Sunday-Tuesday: Will be available for pickup on Thursday Free
Available Dubai Self Pickup 1-2 Days Free
Available UAE Remote Areas Delivery 4-5 days 22 AED / Free Above 50 AED
Available UAE Urban Areas Delivery 2-3 Days 22 AED / Free Above 50 AED
Available International Delivery 4-7 days 180 AED | 49 $
Pre-Order General 2-3 weeks

Payment Methods:

FF200R12KT3 payments method new 403 by 26 1

Product Description:

Specifications:

Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 295 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1050 W
Package/Case: 62 mm
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.9 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Width: 61.4 mm

Product Attributes :

Specification

Unit Of Measure

Units

Brand

GENERIC

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