FDS5670 SOIC-8
AED 20.00
In stock
In stock
Stock | Shipping Method | ETA | Cost | |
Available | Self Pickup | 1 Day | Free | |
---|---|---|---|---|
Available | Inside UAE | 2 - 3 Days | 22 AED / Free Above 50 AED | |
Available | International | 4 - 7 Days | 180 AED | 49 $ | |
Pre-Order | General | 2 Weeks |
Payment Methods:
Specifications:
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOIC-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 10 A
Rds On – Drain-Source Resistance: 14 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 70 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 2.5 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 23 ns
Forward Transconductance – Min: 39 S
Height: 1.75 mm
Length: 4.9 mm
Product Type: MOSFET
Rise Time: 10 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 16 ns
Width: 3.9 mm
Unit Weight: 130 mg
Product Attributes :
Specification
Unit Of Measure |
Units |
---|---|
Brand |
GENERIC |
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