Specification:

Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 71 A
Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
Critical rate of rise of off-state voltage (dV/dt): 250 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 2 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.65 V
Triggering gate current (IGT): 10 mA
Holding current (IH): 20 mA