BSM100GB120DN2K
AED 235.00
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| Stock | Location | Shipping Method | ETA | Cost |
| Available | Abu Dhabi | Self Pickup | Wednesday-Saturday: Will be available for pick up on Tuesday Sunday-Tuesday: Will be available for pickup on Thursday | Free |
|---|---|---|---|---|
| Available | Dubai | Self Pickup | 1-2 Days | Free |
| Available | UAE Remote Areas | Delivery | 4-5 days | 22 AED / Free Above 50 AED |
| Available | UAE Urban Areas | Delivery | 2-3 Days | 22 AED / Free Above 50 AED |
| Available | International | Delivery | 4-7 days | 180 AED | 49 $ |
| Pre-Order | General | 2-3 weeks |
Payment Methods:
Specifications:
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 145 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 700 W
Package/Case: Half Bridge1
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.5 mm
Length: 94 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Attributes :
Specification
| Unit Of Measure |
Units |
|---|---|
| Brand |
GENERIC |
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