BSM100GB120DN2K
AED 235.00
In stock
In stock
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| Stock | Shipping Method | ETA | Cost | |
 |
Available | Self Pickup | 1 Day | Free |
|---|---|---|---|---|
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Available | Inside UAE | 2 - 3 Days | 22 AED / Free Above 50 AED |
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Available | International | 4 - 7 Days | 180 AED | 49 $ |
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Pre-Order | General | 2 Weeks |
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Specifications:
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 145 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 700 W
Package/Case: Half Bridge1
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.5 mm
Length: 94 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Attributes :
Specification
| Unit Of Measure |
Units |
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| Brand |
GENERIC |
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