TLP523-4-DIP

The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected phototransistor which has an integral base−emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP523−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP523−4 provides four isolated channels per package.
· Current transfer ratio: 500% (min.) (IF = 1 mA)
· Isolation voltage: 2500 Vrms (min.)
· Collector−emitter voltage: 55 V (min.)
· Leakage current: 10μA (max.) (Ta = 85°C)
· UL recognized: UL1577, file no. E67349