JORD
TLP251-DIP
AED 5.00
In stock
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The TOSHIBA TLP251 consists of a GaAâ„“As light emitting diode and a
integrated photodetector.
This unit is an 8-lead DIP package.
TLP251 is suitable for gate driving circuits of IGBT or power MOSFET.
The TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
Input threshold current: IF=5mA(max.)
Supply current (ICC): 11mA(max.)
Supply voltage (VCC): 10−35V
Output current (IO): ±0.4A(max.)
Switching time (tpLH / tpHL): 1µs(max.)
Isolation voltage: 2500Vrms(min.)
UL recognized: UL1577, file no.E67349
| Brand | Generic |
|---|---|
| GTIN | 1, |
| IC type | N/A |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |