Specifications:

Drain-source voltage VDSS 200 V
Gate-source voltage VGSS ±30 V
TC=25℃ 18 A
Drain current (DC) * ID
TC=100℃ 9.1 A
Drain current (Pulsed) *
IDM 72 A
Power dissipation PD 35 W
Avalanche current (Single) â‘¡ IAS 18 A
Single pulsed avalanche energy â‘¡ EAS 453. mJ
Avalanche current (Repetitive) â‘  IAR 18 A
Repetitive avalanche energy â‘  EAR 13.9 mJ
Junction temperature TJ 150
Storage temperature range Tstg -55~150 °C