FQPF7N60, N-Channel Power MOSFET, TO-220F-3

The FQPF7N60 is a high-speed switching N-channel MOSFET designed for use in high-efficiency power supplies, PFC circuits, and other high-voltage switching applications. Built on Fairchild’s planar stripe DMOS technology, it offers a balanced combination of breakdown voltage, switching speed, and thermal performance — all within an insulated TO-220F full-pack package, making it suitable for compact and efficient power designs.

Key Features:

• High Voltage Tolerance: Withstands up to 600 V drain-source breakdown voltage.
• Moderate Current Handling: Supports up to 4.3 A continuous drain current at 25°C.
• Low Gate Charge: Typical 29 nC enables efficient high-speed switching.
• Low Input Capacitance: Minimizes switching losses and improves performance (C_iss = 1100 pF).
• 100% Avalanche Tested: Rated for 580 mJ avalanche energy for improved ruggedness.
• Insulated TO-220F Package: Provides electrical isolation for easy heatsink mounting.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 4.3A At 25°C
• Drain-Source Breakdown Voltage (Vds): 600V
• Gate-Source Threshld Voltage (Vgs th): 3-5V
• Power Dissipation: 48W
• Operating Temprature: -55+150°C