2SB631K ,PNP Power Transistor - TO-126 Package, 100V, 1A

The 2SB631K is a PNP epitaxial planar silicon power transistor designed for low-frequency power amplifier applications. It features a high breakdown voltage of 100V and a maximum current handling capability of 1A, making it suitable for a variety of audio and signal amplification circuits.

Key Features :

• High breakdown voltage: 100V collector-emitter voltage (VCEO).
• Continuous collector current rating: 1A.
• Compact TO-126 package with efficient heat dissipation.
• Low saturation voltage for efficient operation.
• Excellent hFE linearity for high-performance amplification.
• Suitable for low-frequency power amplifier applications.