FZ800R12KE3, IGBT Module - 1200V, 800A, 62mm C-Series

The FZ800R12KE3 is a 62mm C-Series IGBT module from Infineon, designed with Trench/Fieldstop IGBT3 technology and an Emitter Controlled 3 Diode for enhanced efficiency. This module is optimized for high power conversion applications, such as motor drives, UPS systems, and wind turbines, offering superior electrical and mechanical characteristics. With a collector-emitter voltage rating of 1200V and a continuous collector current of 800A, this module is ideal for demanding industrial applications requiring low switching losses and high robustness. Its low Vce(sat) improves efficiency, while the high power density and isolated baseplate ensure reliable operation. The FZ800R12KE3 also features a 4kV AC insulation voltage, a package with CTI > 400, and a standard 62mm housing, making it suitable for high-voltage and high-power applications with superior reliability.

Key Features:

• High Power Capability - Supports 800A continuous collector current with 1600A peak.
• Voltage Rating - Operates at 1200V Vce, ensuring compatibility with high-power applications. Low Switching Losses - Efficient performance with reduced power dissipation.
• Low Switching Losses - Efficient performance with reduced power dissipation.
• Trench/Fieldstop IGBT3 Technology - Enhances electrical performance and reduces losses.
• Emitter Controlled 3 Diode - Provides robust and efficient freewheeling diode functionality.
• 4kV Isolation Voltage - Ensures safety and reliability in industrial applications.

Additional Specifications:

• Mounting Style: Screw Mounting
• Collector-Emitter Voltage (VCEO) : 1200V
• Maximum Gate Emitter Voltage: ±15V
• Continuous Collector Current at 25 C: 800A
• Power Dissipation: 3550W
• Operating Temperature Range: -40°C To +125°C