Specifications:

Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 295 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 1050 W
Package/Case: 62 mm
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.9 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Width: 61.4 mm