2SD822, NPN Power Transistor, TO-3 Package

The 2SD822 is a silicon NPN power transistor housed in a TO-3 metal case. It is designed for high-voltage, high-speed switching applications. Its low collector saturation voltage and high breakdown voltage make it suitable for various high-power applications.

• High Breakdown Voltage: Collector-Base Voltage (V_CB) rated at 1500V, suitable for high-voltage applications.
• High Switching Speed: Designed for rapid switching applications, enhancing performance in dynamic circuits.
• Low Collector Saturation Voltage: Ensures efficient operation with minimal power loss; V_CE(sat) is 5.0V (Max) at I_C = 6A.
• High Collector Current: Capable of handling a collector current (I_C) up to 7A, accommodating substantial power loads.
• Robust Power Dissipation: Capable of dissipating up to 50W, ensuring efficient thermal management.
• TO-3 Package: Provides excellent heat dissipation and mechanical stability.