CT60AM-18F, N-Channel IGBT with Integrated Fast-Recovery Diode, TO-3PL

SKU
SCTx3291
Part Number
CT60AM18F
In stock

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The CT60AM-18F is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in microwave ovens, electromagnetic cooking devices, rice cookers, and other power conversion circuits.

With a Collector-Emitter Voltage (VCES) rating of 900V and a Continuous Collector Current of 60A, the CT60AM-18F provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (VCE(sat)) of 2.1V at 25°C minimizes conduction losses, while its integrated fast-recovery diode enhances performance in various power applications.

The device is designed to minimize tail current during turn-off, reducing tail loss and improving efficiency in high-speed switching applications. Encased in a standard TO-3PL package, the CT60AM-18F offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

Key Features :
  • High Voltage Rating: Collector-Emitter Voltage (VCES) of 900V, suitable for high-voltage applications.
  • High Current Capability: Continuous Collector Current of 60A, accommodating substantial power requirements.
  • Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (VCE(sat)) of 2.1V at 25°C, reducing conduction losses.
  • Integrated Fast-Recovery Diode: Enhances performance in various power applications by providing efficient freewheeling.
  • Low Tail Loss: Designed to minimize tail current during turn-off, improving efficiency in switching applications.
  • Standard TO-3PL Package: Provides ease of integration into various circuit designs with efficient heat dissipation.
More Information
GTIN 1,
Max Voltage N/A
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CT60AM-18F, N-Channel IGBT with Integrated Fast-Recovery Diode, TO-3PL

AED 35.00