G60N100 (TSG60N100CE), NPT Trench IGBT with FRD, TO-264

The G60N100 (TSG60N100CE) is a 1000V, 60A N-channel IGBT developed with advanced NPT trench technology. It is optimized for high-speed, high-efficiency power switching applications such as induction heating, microwave generators, and resonant-mode power supplies. It features excellent ruggedness, low switching losses, and soft turn-off behavior. The TO-264 package supports high current handling with robust thermal performance.

Key Features:

• 1000V Collector-Emitter Voltage: Ideal for high-voltage power conversion.
• 60A Continuous Collector Current: Supports high-load switching.
• Integrated Freewheeling Diode: Reduces component count and switching losses.
• NPT Trench Technology: Enables soft switching, high speed, and low conduction loss.
• High Surge Current Capability: Pulsed current rating up to 200A.
• Low Switching Losses: Total switching loss as low as 21.5 mJ (typical).

Additional Specifications:

• Mounting Style: Through Hole
• Collector-Emitter Voltage (VCEO) : 1000V
• Maximum Gate Emitter Voltage: 20V
• Continuous Collector Current at 25 C: 60A
• Power Dissipation: 208W
• Operating Temperature Range: -55+150°C