5N120BND, N-Channel Non-Punch Through (NPT) IGBT with Anti-Parallel Hyperfast Diode, TO-247

The 5N120BND is an N-Channel Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.

With a Collector-Emitter Voltage (V_CE) rating of 1200V and a Continuous Collector Current of 21A at 25°C, the 5N120BND provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.45V at 25°C minimizes conduction losses, while a typical fall time of 175ns at T_J = 150°C ensures efficient high-speed switching.

The device is designed to withstand short circuit conditions, enhancing its reliability in fault scenarios. Additionally, it features an integrated hyperfast recovery anti-parallel diode, improving overall performance in switching applications.

Encased in a TO-247 package, the 5N120BND offers ease of integration into various circuit designs.

• High Voltage Capability: Collector-Emitter Voltage (V_CE) rating of 1200V, suitable for high-voltage applications.
• Moderate Current Handling: Continuous Collector Current of 21A at 25°C, accommodating various power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.45V at 25°C, reducing conduction losses.
• Fast Switching Performance: Typical fall time of 175ns at T_J = 150°C, enhancing efficiency in switching applications.
• Short Circuit Rating: Designed to withstand short circuit conditions, enhancing reliability.
• Integrated Anti-Parallel Hyperfast Diode: Features a hyperfast recovery anti-parallel diode for improved performance.