RJP63F3, N-Channel IGBT, TO-220FL

The RJP63F3 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Utilizing trench gate and thin wafer technology (G6H series), this IGBT offers low conduction losses and efficient switching performance, making it ideal for use in high-frequency inverters, motor drives, and power supplies.

With a Collector-Emitter Voltage (V_CES) rating of 630V and a Continuous Collector Current of 40A at 25°C, the RJP63F3 provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.7V at 25°C minimizes conduction losses, while a typical fall time (t_f) of 100ns ensures efficient high-speed switching.

The device features a low leakage current, with a maximum Zero Gate Voltage Collector Current (I_CES) of 1μA, ensuring minimal power loss during off states. Encased in an isolated TO-220FL package, the RJP63F3 offers ease of integration into various circuit designs, providing both electrical isolation and thermal performance.

• High Voltage Capability: Collector-Emitter Voltage (V_CES) rating of 630V, suitable for high-voltage applications.
• Moderate Current Handling: Continuous Collector Current of 40A at 25°C, accommodating various power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.7V at 25°C, reducing conduction losses.
• High-Speed Switching: Designed for fast switching with a typical fall time (t_f) of 100ns, enhancing efficiency in switching applications.
• Low Leakage Current: Maximum Zero Gate Voltage Collector Current (I_CES) of 1μA, ensuring minimal leakage.
• Isolated Package: Encased in a TO-220FL package, providing isolation and ease of integration into various circuit designs.