BUZ11, N-Channel Power MOSFET, TO-220 Package

The BUZ11 is a high-speed, high-current N-channel MOSFET featuring low on-resistance and fast switching. Designed for applications such as relay drivers, audio amplifiers, solenoid controllers, and DC-DC converters, this device offers excellent performance in automotive and industrial systems. The rugged construction and 175°C maximum junction temperature make it suitable for demanding environments.

Key Features:

• Low R_DS(on): Only 0.03 Ω typical at 10V gate drive for minimal conduction loss.
• High Current Handling: Supports up to 33 A continuous drain current at 25°C.
• Fast Switching Performance: Turn-on time of 40 ns, fall time of 110 ns.
• Avalanche Rugged Technology: Rated for 200 mJ single-pulse avalanche energy.
• Logic-Level Gate Drive Compatible: Gate threshold voltage as low as 2.1 V.
• Robust TO-220 Package: Easy to mount and well suited for heat dissipation.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 33A
• Drain-Source Breakdown Voltage (Vds): 50V
• Gate-Source Threshld Voltage (Vgs th): 2.1-4V
• Power Dissipation: 90W
• Operating Temprature: -65+175°C