IRF640NS ,N-Channel Power MOSFET ,200V, 18A - TO-263

The IRF640NS is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a drain-source voltage rating of 200V and a continuous drain current capacity of 18A, it is suitable for various high-power applications. The MOSFET features a low on-resistance of 0.15Ω, minimizing conduction losses and enhancing overall efficiency. Its fast switching capabilities make it ideal for high-frequency applications. Encased in a thermally efficient D2Pak (TO-263) package, the IRF640NS ensures effective heat dissipation, contributing to its reliability in demanding environments. The device is fully avalanche rated, providing robustness against voltage spikes and transients.

• High Voltage Tolerance – Withstands a drain-source voltage (V_DSS) of up to 200V, suitable for high-voltage applications.
• Low On-Resistance – Features a maximum drain-source on-state resistance (R_DS(on)) of 0.15Ω, ensuring efficient performance.
• High Current Capacity – Supports a continuous drain current (I_D) of 18A, ideal for high-power applications.
• Fast Switching Speed – Designed for rapid switching operations, enhancing performance in high-frequency applications.
• Thermally Efficient Package – Encased in a D2Pak (TO-263) package, providing effective heat dissipation.
• Rugged Design – Fully avalanche rated, ensuring reliability under demanding conditions.