IRF640NS ,N-Channel Power MOSFET ,200V, 18A - TO-263

SKU
SCTx3221
Part Number
F640NS
Brand:

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The IRF640NS is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a drain-source voltage rating of 200V and a continuous drain current capacity of 18A, it is suitable for various high-power applications. The MOSFET features a low on-resistance of 0.15Ω, minimizing conduction losses and enhancing overall efficiency. Its fast switching capabilities make it ideal for high-frequency applications. Encased in a thermally efficient D2Pak (TO-263) package, the IRF640NS ensures effective heat dissipation, contributing to its reliability in demanding environments. The device is fully avalanche rated, providing robustness against voltage spikes and transients.


Key Features:
  • High Voltage Tolerance – Withstands a drain-source voltage (VDSS) of up to 200V, suitable for high-voltage applications.
  • Low On-Resistance – Features a maximum drain-source on-state resistance (RDS(on)) of 0.15Ω, ensuring efficient performance.
  • High Current Capacity – Supports a continuous drain current (ID) of 18A, ideal for high-power applications.
  • Fast Switching Speed – Designed for rapid switching operations, enhancing performance in high-frequency applications.
  • Thermally Efficient Package – Encased in a D2Pak (TO-263) package, providing effective heat dissipation.
  • Rugged Design – Fully avalanche rated, ensuring reliability under demanding conditions.
Operating Temperature -55+175°C
Mounting Style Through Hole
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Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1 Day

Free

Available

inside UAE

2 - 3 Days

22 AED / Free Above 50 AED

Available

International

4 - 7 Days

180 AED / 49 $

pre-order

General

4-5 Weeks

 

IRF640NS ,N-Channel Power MOSFET ,200V, 18A - TO-263

AED 2.00