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IRF640NS ,N-Channel Power MOSFET ,200V, 18A - TO-263
AED 2.00


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You may check out all the available products and buy some in the shop.
Guarantee safe & secure checkout
The IRF640NS is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a drain-source voltage rating of 200V and a continuous drain current capacity of 18A, it is suitable for various high-power applications. The MOSFET features a low on-resistance of 0.15Ω, minimizing conduction losses and enhancing overall efficiency. Its fast switching capabilities make it ideal for high-frequency applications. Encased in a thermally efficient D2Pak (TO-263) package, the IRF640NS ensures effective heat dissipation, contributing to its reliability in demanding environments. The device is fully avalanche rated, providing robustness against voltage spikes and transients.
Operating Temperature | -55+175°C |
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Mounting Style | Through Hole |
Stock |
Shipping Method |
ETA |
Cost |
|
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |