RFH25P08, P-Channel Power MOSFET, TO-3 Package

The RFH25P08 is a P-channel enhancement mode silicon gate power field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. With a drain-source voltage rating of -100 V and a continuous drain current of -25 A, it is well-suited for high-power applications. The MOSFET's low on-resistance of 0.150 Ω reduces conduction losses, while its fast switching capabilities enhance performance in high-speed circuits. Encased in a standard TO-3 package, the RFH25P08 offers robust thermal performance, making it a reliable choice for various power management applications.

• High Drain-Source Voltage: Withstands up to -100 V, suitable for high-voltage applications.
• High Continuous Drain Current: Rated at -25 A, ideal for substantial power requirements.
• Low On-Resistance: R_DS(on) of 0.150 Ω, minimizing conduction losses.
• Fast Switching Speed: Optimized for rapid switching applications, enhancing efficiency.
• Robust Power Dissipation: Capable of dissipating significant power, ensuring reliability under various conditions.
• Standard TO-3 Package: Facilitates easy mounting and efficient heat dissipation.