FDA59N30, N-Channel Power MOSFET, TO-3P

The FDA59N30 is a 300V, 59A N-channel MOSFET built on Fairchild's proprietary planar stripe DMOS technology. It offers fast switching, low gate charge, and robust avalanche performance. The device is ideally suited for applications like high-efficiency switch-mode power supplies, active PFCs, industrial motor drives, and DC-DC converters. The TO-3P package enables excellent thermal resistance and simplifies heatsinking in high-power designs.

Key Features:

• High Voltage Rating: Supports up to 300 V drain-source breakdown voltage.
• High Current Handling: Delivers up to 59 A continuous current at 25°C.
• Low On-Resistance: R_DS(on) as low as 0.056 Ω, reducing conduction losses.
• Fast Switching Capability: Gate charge of 77 nC, suitable for high-speed switching.
• Avalanche Rated: Capable of handling 1734 mJ avalanche energy.
• Robust Package: TO-3P for superior thermal dissipation and high-power handling.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 59A
• Drain-Source Breakdown Voltage (Vds): 300V
• Gate-Source Threshld Voltage (Vgs th): 3-5V
• Power Dissipation: 500W
• Operating Temprature: -55+150°C