FQP19N20C, N-Channel Power MOSFET, TO-220

The FQP19N20C is an N-channel enhancement mode MOSFET manufactured using Fairchild’s proprietary planar stripe DMOS technology. It is designed for applications requiring high efficiency switching — including DC/DC converters, SMPS, UPS systems, and motor controllers. Its low gate charge and on-resistance, combined with a robust thermal profile, make it ideal for power conversion in industrial and consumer electronics.

Key Features:

• High Voltage Capability: Withstands drain-source voltages up to 200 V.
• Moderate Current Handling: Supports up to 19 A continuous drain current.
• Low R_DS(on): Only 0.17 Ω max @ V_GS = 10V for efficient conduction.
• Fast Switching: With a typical gate charge of 40.5 nC.
• Avalanche Rated: Withstands up to 433 mJ in single-pulse avalanche energy.
• Standard TO-220 Package: Ensures easy mounting and excellent heat dissipation.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 19A
• Drain-Source Breakdown Voltage (Vds): 200V
• Gate-Source Threshld Voltage (Vgs th): 2-4V
• Power Dissipation: 139W
• Operating Temprature: -55+150°C