MJ10016, NPN Power Darlington Transistor, TO-3

The MJ10016 is a high-speed NPN silicon Darlington power transistor designed for use in high-voltage, high-current switching applications such as inverters, motor drives, and switching regulators. Its low saturation voltage, high gain, and short storage time make it ideal for use in line-operated switch-mode power supplies. The rugged TO-3 (TO-204AE) package allows reliable operation under demanding conditions.

Key Features:

• High Voltage Rating: Withstands collector-emitter voltage up to 500V.
• High Current Capability: Supports continuous collector current of 50A.
• High Power Dissipation: Rated at 250W, with excellent thermal stability.
• Fast Switching: Optimized for inductive loads with crossover time < 1.0 µs.
• Integrated Diode: Internal collector-emitter diode for clamping inductive spikes.
• Rugged Package: TO-3 metal can offers exceptional mechanical and thermal robustness.

Additional Specifications:

• Mounting Style: Through Hole
• Maximum DC Collector Current (Ic): 50A
• Collector-Emitter Voltage (VCEO) Max: 500V
• Collector-Base Voltage (VCBO): 700V
• Emitter-Base Voltage (VEBO): 8V
• Power Dissipation: 250W
• Operating Temprature: -65+200°C