IRFZ42, N-Channel Enhancement Mode Power MOSFET, TO-220 Package

The IRFZ42 is an N-channel enhancement mode power MOSFET designed for high-efficiency switching applications. With a drain-source voltage rating of 50 V and a continuous drain current of 35 A, it is well-suited for low to medium voltage applications requiring high current handling. The MOSFET's low on-resistance of 0.035 Ω reduces conduction losses, while its fast switching speed, characterized by a rise time of 60 ns, enhances performance in high-speed circuits. Encased in a standard TO-220 package, the IRFZ42 offers robust thermal performance with a maximum power dissipation of 125 W, making it a reliable choice for various power management applications.

• High Drain-Source Voltage: Withstands up to 50 V, suitable for low to medium voltage applications.
• High Continuous Drain Current: Rated at 35 A, ideal for high-current applications.
• Low On-Resistance: Features an R_DS(on) of 0.035 Ω, minimizing conduction losses.
• Fast Switching Speed: Rise time of 60 ns, enhancing efficiency in high-speed applications.
• Robust Thermal Performance: Maximum power dissipation of 125 W, ensuring reliability under high power conditions.
• Standard TO-220 Package: Facilitates easy mounting and efficient heat dissipation.