FGH50N6S2D, N-Channel IGBT with Anti-Parallel Stealth Diode, TO-247

The FGH50N6S2D is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications, featuring an integrated Anti-Parallel Stealth™ Diode to enhance efficiency and reduce power losses. Optimized for high-frequency power factor correction (PFC) circuits, full-bridge and half-bridge converters, push-pull circuits, and uninterruptible power supplies (UPS), this IGBT delivers outstanding performance in zero voltage and zero current switching applications.

With a Collector-Emitter Voltage (V_CES) of 600V and a Continuous Collector Current of 75A at 25°C, the FGH50N6S2D provides exceptional power handling capability. The low Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.9V at 30A minimizes conduction losses, enhancing overall efficiency.

The Anti-Parallel Stealth™ Diode is optimized for low noise and EMI, offering superior recovery characteristics compared to conventional fast diodes. This design ensures efficient operation at high frequencies up to 200kHz, making it ideal for resonant converters, induction heating systems, and advanced switching power supplies.

The FGH50N6S2D is housed in a TO-247 package, providing excellent thermal performance and mechanical durability, ensuring reliable operation in demanding environments.

• High Voltage Capability: Collector-Emitter Voltage (V_CES) rating of 600V, ideal for high-voltage applications.
• High Voltage Capability: Collector-Emitter Voltage (V_CES) rating of 600V, ideal for high-voltage applications.
• Low Saturation Voltage: Collector-Emitter Saturation Voltage (V_CE(sat)) of 1.9V at 30A, reducing conduction losses.
• Fast Switching Performance: Designed for 100kHz operation at 390V, 40A and 200kHz operation at 390V, 25A.
• UIS Rated for High Reliability: Unclamped Inductive Switching (UIS) rating of 480mJ, ensuring robust avalanche capability.
• TO-247 Package: Industry-standard TO-247 package for high power dissipation and easy mounting.