FGH50N6S2D, N-Channel IGBT with Anti-Parallel Stealth Diode, TO-247
AED 18.00
In stock


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The FGH50N6S2D is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications, featuring an integrated Anti-Parallel Stealth™ Diode to enhance efficiency and reduce power losses. Optimized for high-frequency power factor correction (PFC) circuits, full-bridge and half-bridge converters, push-pull circuits, and uninterruptible power supplies (UPS), this IGBT delivers outstanding performance in zero voltage and zero current switching applications.
With a Collector-Emitter Voltage (VCES) of 600V and a Continuous Collector Current of 75A at 25°C, the FGH50N6S2D provides exceptional power handling capability. The low Collector-Emitter Saturation Voltage (VCE(sat)) of 1.9V at 30A minimizes conduction losses, enhancing overall efficiency.
The Anti-Parallel Stealth™ Diode is optimized for low noise and EMI, offering superior recovery characteristics compared to conventional fast diodes. This design ensures efficient operation at high frequencies up to 200kHz, making it ideal for resonant converters, induction heating systems, and advanced switching power supplies.
The FGH50N6S2D is housed in a TO-247 package, providing excellent thermal performance and mechanical durability, ensuring reliable operation in demanding environments.
Key Features :GTIN | 1, |
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Max Voltage | N/A |
Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |