G4BC30S-S, N-Channel Standard Speed IGBT, D2Pak

The G4BC30S-S is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for standard speed switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in low-frequency inverters, motor controls, and other power conversion circuits operating below 1kHz.

With a Collector-Emitter Voltage (V_CES) rating of 600V and a Continuous Collector Current of 34A at 25°C, the G4BC30S-S provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(on)) of 1.4V at 18A minimizes conduction losses, enhancing overall efficiency.

The device's standard speed switching capabilities make it suitable for low-frequency applications. Encased in a compact D2Pak package, the G4BC30S-S offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 600V, suitable for medium to high-voltage applications.
• Moderate Current Capability: Continuous Collector Current of 34A at 25°C, accommodating various power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(on)) of 1.4V at 18A, reducing conduction losses.
• Standard Speed Switching: Optimized for low operating frequencies below 1kHz, providing efficient performance in suitable applications.
• Fourth-Generation IGBT Technology: Offers tight parameter distribution and high efficiency, enhancing overall device performance.
• Compact D2Pak Package: Provides efficient heat dissipation and ease of integration into various circuit designs.