RJH60F3,N-Channel IGBT for High-Speed Power Switching, TO-3P

The RJH60F3 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in inverters, motor drivers, uninterruptible power supply (UPS) systems, and other power conversion circuits.

With a Collector-Emitter Voltage (V_CES) rating of 600V and a Continuous Collector Current of 20A, the RJH60F3 provides robust performance for demanding applications. Its design minimizes conduction losses, enhancing overall efficiency, while its fast switching capabilities ensure efficient high-speed operation.

Encased in a standard TO-3P package, the RJH60F3 offers ease of integration into various circuit designs, providing efficient heat dissipation and reliable performance.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 600V, suitable for high-voltage applications.
• Moderate Current Capability: Continuous Collector Current of 20A, accommodating various power requirements.
• Low Saturation Voltage: Designed to minimize conduction losses, enhancing overall efficiency.
• Fast Switching Performance: Optimized for high-speed operation, improving efficiency in switching applications.
• Robust Design: Engineered to handle demanding operating conditions with reliability.
• Standard TO-3P Package: Provides ease of integration into various circuit designs with efficient heat dissipation.