IRFB31N20D ,N-Channel MOSFET - 200V, 31A, TO-220AB Package

The IRFB31N20D is a high-performance N-Channel Power MOSFET designed for high-frequency switching applications such as DC-DC converters and SMPS. It offers a low on-state resistance of 0.082Ω and a high continuous drain current of 31A, making it ideal for high-efficiency systems. With a drain-source breakdown voltage of 200V and a maximum power dissipation of 200W, this MOSFET is built for robust performance in demanding environments.

Key Features :

• High Drain-Source Breakdown Voltage: Rated at 200V for a wide range of high-voltage applications.
• High Continuous Drain Current: Capable of handling 31A of current at 25C, ensuring high power capacity.
• Low On-State Resistance (Rds): With only 0.082Ω, it minimizes conduction losses, enhancing system efficiency.
• Fast Switching Speed: Optimized for high-frequency applications with a low total gate charge of 107nC.
• Avalanche Rated: Fully characterized avalanche energy ensures reliable operation under harsh conditions.
• TO-220AB Package: Compact yet capable of high power dissipation, up to 200W, suitable for space-constrained designs.