HGP210N20S, N-Channel Power MOSFET, TO-220

The HGP210N20S is a high-performance N-channel MOSFET designed for applications requiring high voltage and current capabilities with fast switching speeds. Its low on-resistance and low gate charge make it ideal for efficient power management in various electronic systems. The TO-220 package offers reliable thermal performance, making it suitable for applications such as power supplies, motor controllers, and other high-power circuits.​

Key Features:

• High Voltage Tolerance: Withstands drain-source voltages up to 200V.​
• High Current Handling: Supports continuous drain currents up to 70A.​
• Low On-Resistance: Maximum R_DS(on) of 0.021Ω, ensuring efficient conduction.​
• Fast Switching Performance: Rise time of 20ns, suitable for high-speed applications.​
• Low Gate Charge: Total gate charge of 35nC, facilitating efficient driving.​
• Robust Thermal Performance: Maximum junction temperature of 175°C, allowing operation in demanding environments.​

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 70A
• Drain-Source Breakdown Voltage (Vds): 200V
• Gate-Source Threshld Voltage (Vgs th): 4V
• Power Dissipation: 300W
• Operating Temprature: -55+175°C