2SD1707, NPN Silicon Power Transistor, TO-220F Package

The 2SD1707 is an NPN silicon power transistor housed in a TO-220F full-pack package. It is designed for power switching applications, offering a high collector-emitter breakdown voltage of at least 80 V. The transistor features a low collector-emitter saturation voltage, with a maximum of 0.5 V at a collector current of 8 A, ensuring efficient operation. It provides good linearity of DC current gain (h_FE), contributing to consistent performance across various operating conditions. The 2SD1707 is capable of handling high collector currents, making it suitable for demanding power applications. It is complementary to the 2SB1156 PNP transistor, allowing for push-pull configurations in amplifier circuits. The full-pack TO-220F package facilitates easy mounting and effective heat dissipation, enhancing the reliability of the device in power switching applications.

• High Collector-Emitter Breakdown Voltage: Minimum V_(BR)CEO of 80 V, suitable for various power switching applications.
• Low Collector-Emitter Saturation Voltage: Maximum V_CE(sat) of 0.5 V at I_C = 8 A, ensuring efficient operation.
• Good Linearity of DC Current Gain (h_FE): Provides consistent performance across operating conditions.
• High Collector Current Capability: Designed to handle high currents, making it ideal for power applications.
• Complementary to 2SB1156: Allows for push-pull configurations in amplifier circuits.
• Full-Pack TO-220F Package: Enables easy mounting and effective heat dissipation.