STP13NM60N, N-Channel Power MOSFET, TO-220

The STP13NM60N is a high-voltage N-channel MOSFET utilizing ST’s MDmesh™ II technology, optimized for high-efficiency power switching. With a 600V breakdown voltage, 11A current capability, and low R_DS(on), it is well-suited for use in switch-mode power supplies, lighting ballasts, and industrial power conversion.

Key Features:

• High Voltage Tolerance: Withstands up to 600 V drain-source voltage.
• Strong Current Handling: Supports continuous drain current of 11 A at 25°C.
• Low On-Resistance: Typical R_DS(on) of 0.28 Ω at V_GS = 10 V.
• Fast Switching: Gate charge of 27 nC enables efficient switching performance.
• Avalanche Rated: Built to sustain inductive load switching without failure.
• Thermal Stability: Maximum junction temperature of 150°C with 90 W dissipation.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 11A At 25°C
• Drain-Source Breakdown Voltage (Vds): 600V
• Gate-Source Threshld Voltage (Vgs th): 2-4V
• Power Dissipation: 90W
• Operating Temprature: -55+150°C