IRF2807ZS, N-Channel HEXFET® Power MOSFET, D2Pak Package

The IRF2807ZS is an N-channel HEXFET® power MOSFET designed for high-power switching applications. With a drain-source voltage rating of 75 V and a continuous drain current of 75 A, it is well-suited for various power control applications. The MOSFET's low on-resistance of 9.4 mΩ reduces conduction losses, while its fast switching capabilities enhance performance in high-speed circuits. Encased in a D2Pak surface-mount package, the IRF2807ZS offers robust thermal performance, making it a reliable choice for demanding power management applications.

• Low On-Resistance: R_DS(on) of 9.4 mΩ, minimizing conduction losses.
• High Drain-Source Voltage: Withstands up to 75 V, suitable for various power applications.
• High Continuous Drain Current: Rated at 75 A, ideal for high-power requirements.
• Fast Switching Speed: Enhances efficiency in high-speed operations.
• Robust Power Dissipation: Capable of dissipating up to 170 W, ensuring reliability under demanding conditions.
• D2Pak Surface-Mount Package: Facilitates efficient heat dissipation and space-saving designs.