FQPF9N90, N-Channel Power MOSFET, TO-220F-3

The FQPF9N90 is an N-channel MOSFET developed using Fairchild’s proprietary planar stripe DMOS technology. Optimized for low on-resistance and fast switching, this transistor is suitable for high-voltage switch-mode power supplies, power factor correction circuits, and other high-efficiency power conversion designs. The fully insulated TO-220F-3 package simplifies design by removing the need for external insulation pads.

Key Features:

• Very High Voltage: Withstands drain-source voltages up to 900V.
• Moderate Current Capability: Rated for 8A continuous at 25°C.
• Low Gate Charge: Typical 45nC total gate charge for efficient switching.
• TO-220F Package: Fully insulated tab, simplifying thermal management.
• Fast Switching: Ideal for high-efficiency switch-mode power supplies.
• Avalanche Energy Rated: Supports rugged operation under inductive loads.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 8A At 25°C
• Drain-Source Breakdown Voltage (Vds): 900V
• Gate-Source Threshld Voltage (Vgs th): 3-5V
• Power Dissipation: 68W
• Operating Temprature: -55+150°C