BD712 ,Silicon Power Transistor, 100V VCEO, 12A Collector Current

The BD712 is a silicon PNP epitaxial-base power transistor designed for high-performance linear and switching industrial equipment applications. Packaged in the reliable TO-220 plastic format, this transistor offers excellent efficiency and durability, making it ideal for power regulation and amplification in critical circuits.

With a maximum collector-emitter voltage of 100V and a robust current handling capacity of 12A, the BD712 delivers reliable operation even under demanding conditions. Its versatile features, including a base-emitter voltage of 1.5V and high DC current gain (hFE), ensure precision in various industrial applications.

Optimized for linear and switching operations, this transistor is suitable for applications requiring high thermal resistance and stability over a wide temperature range (-65C to 150C). Whether used in power amplifiers or motor drivers, the BD712 delivers consistent and dependable performance.

Key Features :

• High Voltage Capacity: Supports up to 100V collector-emitter voltage, ensuring reliable performance in high-voltage applications.
• High Current Handling: Can manage up to 12A collector current, suitable for industrial-grade power needs.
• Robust Thermal Stability: Operating temperature range from -65C to 150C, designed for demanding industrial environments.
• TO-220 Package: Compact, durable, and easy to integrate into existing designs.
• High DC Current Gain: Ensures efficient amplification with a typical hFE of 15 at 4A.
• Low Base-Emitter Voltage: Operates efficiently with a base-emitter voltage of 1.5V, improving energy efficiency.