BS250, P-Channel Enhancement Mode MOSFET, TO-92 Package

The BS250 is a P-Channel enhancement mode MOSFET designed for low-power switching applications in industrial and consumer electronics. With a drain-source breakdown voltage of -45V and a continuous drain current of -180mA, it is ideal for circuits requiring reliable switching with minimal power loss. The low on-resistance of 8Ω ensures efficient operation, while its gate-source threshold voltage of -1V to -3.5V makes it suitable for logic-level control. The compact TO-92 package offers easy through-hole mounting, making it a popular choice for various low-power applications.

• Low Voltage Operation: Supports up to -45V Drain-Source breakdown voltage.
• Efficient Switching: Low on-resistance of 8Ω for reduced power loss.
• Logic-Level Control: Gate-Source threshold voltage of -1V to -3.5V, enabling easy interfacing.
• Compact Package: TO-92 form factor, ideal for through-hole PCB designs.
• Reliable Performance: Power dissipation of 830mW, ensuring stability in various applications.
• Wide Operating Temperature: Functions in extreme conditions from -55°C to 150°C.