2SK3205, N-Channel MOSFET, TO-220FM Package

The 2SK3205 is a silicon N-channel MOSFET designed for high-speed switching and power management applications. It features a low on-resistance, high forward transfer admittance, and fast switching capabilities, making it ideal for use in switching regulators, DC-DC converters, and motor drive applications. The TO-220FM package ensures efficient thermal performance and ease of mounting, making it a preferred choice for applications requiring high-voltage and high-efficiency operation.

• Low On-Resistance: Exhibits a typical drain-source on-resistance (R_DS(on)) of 0.36 Ω, ensuring efficient current flow with minimal voltage drop.
• High Forward Transfer Admittance: Provides a typical |Y_fs| of 4.5 S, facilitating effective amplification and switching performance.
• Low Leakage Current: Features a maximum drain-source leakage current (I_DSS) of 100 µA at V_DS = 150V, improving device reliability.
• High-Speed Switching: Designed for fast switching applications, enhancing performance in DC-DC converters and switching regulators.
• Enhanced Thermal Performance: The TO-220FM package provides better heat dissipation compared to conventional packages, ensuring stable operation.
• High Voltage Tolerance: Withstands a drain-source voltage (V_DSS) up to 150V, suitable for high-voltage applications.