2SD1460,NPN Triple Diffused Darlington Power Transistor - TO-3 Package,100V,30A

The 2SD1460 is a high-performance silicon NPN transistor designed using a triple-diffused process, optimized for industrial and high-current switching applications. With a collector-emitter voltage rating of 100V and a maximum collector current of 30A, this Darlington power transistor delivers high current gain and low saturation voltage. Its monolithic construction integrates a built-in base-emitter shunt resistor for enhanced reliability.

Encased in a robust TO-3 package, the 2SD1460 provides efficient thermal dissipation, making it ideal for use in industrial power supplies, motor controllers, and high-power switching systems. The transistor’s low collector-emitter saturation voltage and high current handling capability ensure efficient operation in demanding applications.

Key Features :

• High current handling capability with 30A continuous collector current.
• Collector-emitter voltage rating of 100V.
• Low collector-emitter saturation voltage (VCE(sat)) for efficient switching.
• High DC current gain (hFE) of up to 1000 for reliable amplification.
• Monolithic construction with a built-in base-emitter shunt resistor.
• TO-3 package for superior thermal dissipation in high-power applications.