JORD
2SA1012 ,PNP Silicon Transistor, -60V VCEO, -5A IC
AED 6.00
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The 2SA1012 is a high-current silicon PNP epitaxial transistor designed for switching and industrial applications. Featuring a Collector-Emitter Voltage (VCEO) of -60V and a Collector Current (IC) of -5A, it is ideal for use in high-current switching and low saturation voltage circuits. This transistor is part of Toshiba's advanced epitaxial process, ensuring reliability and high-speed performance.
Encased in a robust TO-220AB package, the 2SA1012 delivers excellent heat dissipation, making it suitable for industrial-grade applications. Its low saturation voltage and high-speed switching make it ideal for demanding applications like motor control and industrial automation systems.Key Features :
- High Current Capability: Supports a Collector Current (IC) of up to -5A, making it ideal for high-current circuits.
- High Voltage Tolerance: Handles up to -60V Collector-Emitter Voltage (VCEO) for demanding applications.
- Low Saturation Voltage: Provides efficient performance with a maximum VCE(sat) of -0.4V.
- Fast Switching: Offers a typical switching time (tstg) of 1.0us, enabling high-speed operation.
- Durable TO-220AB Package: Ensures efficient thermal management for industrial and power applications.
- Wide Operating Temperature Range: Reliable operation from -55C to +150C.
| Mounting Style | Through-Hole |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |