IRFP250N,N-Channel HEXFET Power MOSFET, 200V, 30A, TO-247

The IRFP250N is a high-performance N-channel HEXFET power MOSFET designed for a variety of high-power applications, including DC-DC converters, motor drivers, and switching power supplies. With a maximum drain-source voltage of 200V and a current capacity of up to 30A, this MOSFET provides excellent electrical characteristics. It features fast switching, a low Rds(on) of 0.075Ω, and a TO-247 package for improved thermal efficiency. The IRFP250N is also avalanche-rated, ensuring durability and safety even in high-voltage transient conditions. This MOSFET is an excellent choice for both industrial and consumer power electronics applications.

• High Current Capacity: With a continuous drain current of 30A and a pulsed drain current of 120A, this MOSFET is designed for high-power applications.
• Low Rds(on): It has a low on-resistance of 0.075Ω, ensuring efficient switching with minimal power loss.
• High Voltage Capability: Capable of withstanding up to 200V, it is suitable for a wide range of power systems.
• Advanced HEXFET Technology: Optimized for fast switching and ruggedness, ensuring reliability in demanding environments.
• Thermal Efficiency: TO-247 package design allows better thermal performance for high-power usage.
• Avalanche Rated: This MOSFET is fully avalanche rated, ensuring safety and durability even under high-voltage transients.