IRFB4227 Power MOSFET, 200V, 130A, N-Channel

The IRFB4227 is a high-performance N-channel power MOSFET designed for demanding applications such as power supplies, motor control, and switching circuits. With a low on-state resistance of 19.7 mOhm, the IRFB4227 provides excellent efficiency and fast switching performance. Capable of handling high currents up to 130A, this MOSFET is suited for use in high-current switching applications. Its TO-220AB package offers excellent thermal characteristics, making it ideal for both industrial and consumer electronic applications.

The IRFB4227 can withstand high voltages of up to 200V and operates at junction temperatures up to 175C. With its low gate charge, the MOSFET is optimized for fast switching, helping to reduce power losses and improve overall system efficiency. This device is widely used in DC-DC converters, motor drives, power supplies, and class-D audio amplifiers.

• Advanced HEXFET® power MOSFET design for superior performance.
• Low on-resistance (RDS(ON)) of 19.7 mOhm at 10V gate drive.
• High current rating: continuous drain current of 130A at 100C.
• Capable of operating at high temperatures up to 175C.
• Optimized for fast switching with a total gate charge (Qg) of 70nC.
• TO-220AB package for easy mounting and heat dissipation.