IRFB3207, N-Channel MOSFET, TO-220, 75V, 170A

The IRFB3207 N-Channel HEXFET Power MOSFET offers high-speed switching and low on-resistance, making it ideal for high-performance power conversion and switching applications. With a 75V drain-source breakdown voltage and 170A continuous drain current, this MOSFET is designed to handle high-power loads efficiently. Its TO-220 package ensures excellent heat dissipation, while enhanced dynamic dV/dt and avalanche capabilities provide robust performance in demanding environments.

This MOSFET is commonly used in synchronous rectification, high-efficiency power supplies, and hard-switched high-frequency circuits.

• High Current Capability: Supports up to 170A continuous drain current at 25C.
• Low On-Resistance: RDS(on) as low as 3.6 mOhm for reduced conduction losses.
• High Voltage Capability: 75V drain-to-source breakdown voltage for power switching applications.
• Fast Switching: Optimized for high-speed switching with low gate charge and low capacitance.
• Rugged Design: Enhanced dV/dt ruggedness and fully characterized avalanche performance ensure reliable operation.
• Applications: Suitable for synchronous rectification in SMPS, high-frequency circuits, and uninterruptible power supplies.